Document
LESHAN RADIO COMPANY, LTD.
Power MOSFET 200 mAmps, 50 Volts
N–Channel SC-70
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
• Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
• Miniature SC–70 Surface Mount Package saves board space
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
• S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C Operating and Storage Temperature
Range
Symbol VDSS VGS
ID IDM PD TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
Rθ JA TL
Value 50 ± 20
200 800 150 – 55 to 150 556 260
Unit Vdc Vdc mA
mW °C
°C/W °C
LBSS138WT1G S-LBSS138WT1G
3
1 2
CASE 419–02 , STYLE 3 SOT–323 / SC – 70
Drain 3
1 Gate
2 Source
Marking Diagram
M
J1
J1 = Device Code M = Month Code
ORDERING INFORMATION
Device
Marking
Shipping
LBSS138WT1G S-LBSS138WT1G
LBSS138WT3G S-LBSS138WT3G
J1 J1
3000 Tape & Reel 10000 Tape & Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LBSS138WT1G , S-LBSS138WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
50
–
– Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
µAdc
– – 0.1
– – 0.5
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS – – ±0.1 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
–
1.5 Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
Ohms – 5.6 10 – – 3.5
Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 –
– mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss Coss
– 40 50 pF – 12 25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
– 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
td(on) – – 20 ns td(off) – – 20
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS138WT1G , S-LBSS138WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
I D , DRAIN CURRENT (AMPS)
RESISTANCE
DRAIN-TO-SOURCE (NORMALIZED)
0.8 TJ = 25°C
0.7
0.6
0.5 0.4
0.3
VGS = 3.5 V
VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V
0.2
0.1
0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D , DRAIN CURRENT (AMPS)
0.9 VDS = 10 V
0.8 0.7 0.6
-55°C
25°C 150°C
0.5
0.4
0.3
0.2
0.1
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.2 2
1.8 1.6 1.4 1.2
1 0.8 0.6
-ā55
VGS = 10 V ID = 0.8 A
VGS = 4.5 V ID = 0.5 A
-5 45 95 TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with Temperature
145
Vgs(th) , VARIANCE (VOLTS)
1.25 1.125
1 0.875 0.75
-ā55
ID = 1.0 mA
-30 -5
20 45 70
95 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Threshold Voltage Variation with Temperature
145
10 VDS = 40 V TJ = 25°C
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
6
4 ID = 200 mA
2
0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
Rev .O 3/5
,
RDS(on)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
LESHAN RADIO COMPANY, LTD. LBSS138WT1G , S-LBSS138WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
10 9 VGS = 2.5 V
8 150°C
7
6
5 25°C 4 3 -55°C
2
1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
6 5.5 VGS = 4.5 V
5 4.5
4 3.5
3 2.5
2 1.5
1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 ID, DRAIN CURRENT (AMPS)
150°C
25°C -55°C 0.4 0.45
0.5
Figure 8. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
8 VGS = 2.75 V
7
6
150°C
5
4 25°C
3
2 -55°C
1
0
0.05 0.1
0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS)
Figure 7. On–Resistance versus Drain Current
4.5
VGS = 10 V 4
150°C
3.5
3
2.5 25°C
2
1.5 -55°C
1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
ID , DIODE CURRENT (AMPS)
1
0.1
TJ = 150°C 25°C
-55°C
0.01
0.001 0
0.2 0.4 0.6 0.8 1.0 VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. .