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LBSS138WT1G Dataheets PDF



Part Number LBSS138WT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Power MOSFET
Datasheet LBSS138WT1G DatasheetLBSS138WT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications • Miniature SC–70 Surface Mount Package saves board space • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish • S- Prefix for.

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications • Miniature SC–70 Surface Mount Package saves board space • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID IDM PD TJ, Tstg Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Rθ JA TL Value 50 ± 20 200 800 150 – 55 to 150 556 260 Unit Vdc Vdc mA mW °C °C/W °C LBSS138WT1G S-LBSS138WT1G 3 1 2 CASE 419–02 , STYLE 3 SOT–323 / SC – 70 Drain 3 1 Gate 2 Source Marking Diagram M J1 J1 = Device Code M = Month Code ORDERING INFORMATION Device Marking Shipping LBSS138WT1G S-LBSS138WT1G LBSS138WT3G S-LBSS138WT3G J1 J1 3000 Tape & Reel 10000 Tape & Reel Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LBSS138WT1G , S-LBSS138WT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS 50 – – Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) IDSS µAdc – – 0.1 – – 0.5 Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS – – ±0.1 µAdc ON CHARACTERISTICS (Note 1.) Gate–Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 – 1.5 Vdc Static Drain–to–Source On–Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) Ohms – 5.6 10 – – 3.5 Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) gfs 100 – – mmhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss – 40 50 pF – 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss – 3.5 5.0 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(on) – – 20 ns td(off) – – 20 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Rev .O 2/5 LESHAN RADIO COMPANY, LTD. LBSS138WT1G , S-LBSS138WT1G TYPICAL ELECTRICAL CHARACTERISTICS I D , DRAIN CURRENT (AMPS) RESISTANCE DRAIN-TO-SOURCE (NORMALIZED) 0.8 TJ = 25°C 0.7 0.6 0.5 0.4 0.3 VGS = 3.5 V VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics I D , DRAIN CURRENT (AMPS) 0.9 VDS = 10 V 0.8 0.7 0.6 -55°C 25°C 150°C 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -ā55 VGS = 10 V ID = 0.8 A VGS = 4.5 V ID = 0.5 A -5 45 95 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On–Resistance Variation with Temperature 145 Vgs(th) , VARIANCE (VOLTS) 1.25 1.125 1 0.875 0.75 -ā55 ID = 1.0 mA -30 -5 20 45 70 95 120 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Threshold Voltage Variation with Temperature 145 10 VDS = 40 V TJ = 25°C 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 4 ID = 200 mA 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge Rev .O 3/5 , RDS(on) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) LESHAN RADIO COMPANY, LTD. LBSS138WT1G , S-LBSS138WT1G TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 10 9 VGS = 2.5 V 8 150°C 7 6 5 25°C 4 3 -55°C 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) Figure 6. On–Resistance versus Drain Current 6 5.5 VGS = 4.5 V 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 ID, DRAIN CURRENT (AMPS) 150°C 25°C -55°C 0.4 0.45 0.5 Figure 8. On–Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 150°C 5 4 25°C 3 2 -55°C 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) Figure 7. On–Resistance versus Drain Current 4.5 VGS = 10 V 4 150°C 3.5 3 2.5 25°C 2 1.5 -55°C 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 9. On–Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) ID , DIODE CURRENT (AMPS) 1 0.1 TJ = 150°C 25°C -55°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. .


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