Power MOSFET. LBSS84WT3G Datasheet

LBSS84WT3G MOSFET. Datasheet pdf. Equivalent

Part LBSS84WT3G
Description Power MOSFET
Feature LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount M.
Manufacture Leshan Radio Company
Datasheet
Download LBSS84WT3G Datasheet

LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps, LBSS84WT3G Datasheet
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LBSS84WT3G
LESHAN RADIO COMPANY, LTD.
POWER MOSFET
P-CHANNEL 130mAmps,50Volts
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters,
load switching , power management in portable and battery–
powered products such as computers , printers , cellular and
cordless telephones.
LBSS84WT1G
S-LBSS84WT1G
3
FEATURES
1)Energy Efficient
2)Miniature SOT–323 Surface Mount Package Saves Board Space
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
4)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
SOT –323
3 Drain
1
Gate
-
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS84WT1G PD 3000/Tape&Reel
LBSS84WT3G
PD 10000/Tape&Reel
2
Source
MAXIMUM RATINGS(Ta = 25)
Parameter
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 μs)
Total Power Dissipation @ TA = 25°C
Junction and Storage temperature
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for
SolderingPurposes, for 10 seconds
Symbol Limits Unit
VDSS
50
V
VGS ±20 V
mA
ID 130
IDM 520
PD 225 mW
Tj,Tstg −55+150
RΘJA
556 /W
TL 260
June,2015
Rev.B 1/5



LBSS84WT3G
LESHAN RADIO COMPANY, LTD.
LBSS84WT1GS-LBSS84WT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
OFF CHARACTERISTICS
Characteristic
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
Symbol
VBR(DSS)
IDSS
IGSS
Min.
50
Typ.
Max.
0.1
15
60
±10
Unit
V
μA
nA
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 250μAdc)
VGS(th)
0.8
2.0
V
Static Drain–to–Source On–Resistance
RDS(on)
Ohms
(VGS = 5.0 Vdc, ID = 100 mAdc)
5.0 10
Transfer Admittance
|yfs|
mS
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
50 – –
DYNAMIC CHARACTERISTICS
Input Capacitance(VDS = 5.0 Vdc)
Output Capacitance(VDS = 5.0 Vdc)
Transfer Capacitance(VDG = 5.0 Vdc)
Ciss 30 pF
COss 10
CRss
5
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay
Rise Time
Turn–Off Delay
Fall Time
Time
Time
(VDD
ID =
)
= –15 Vdc,
–2.5 Adc,RL
=
50
Gate Charge
td(on
tr
td(off)
tf
QT
2.5
ns
1
16
8
6000 pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage (Note 2.)
VSD
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
2.5
0.13
0.52
A
V
June,2015
Rev.B 2/5





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