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LBSS84LT1G Dataheets PDF



Part Number LBSS84LT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Power MOSFET
Datasheet LBSS84LT1G DatasheetLBSS84LT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching , power management in portable and battery– powered products such as computers , printers , cellular and cordless telephones. LBSS84LT1G S-LBSS84LT1G 3 ●FEATURES 1)Energy Efficient 2)Miniature SOT–23 Surface Mount Package Saves .

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LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching , power management in portable and battery– powered products such as computers , printers , cellular and cordless telephones. LBSS84LT1G S-LBSS84LT1G 3 ●FEATURES 1)Energy Efficient 2)Miniature SOT–23 Surface Mount Package Saves Board Space 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 4)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS84LT1G PD 3000/Tape&Reel LBSS84LT3G PD 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 μs) Total Power Dissipation @ TA = 25°C Junction and Storage temperature Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for SolderingPurposes, for 10 seconds Symbol Limits Unit VDSS 50 V VGS ±20 V mA ID 130 IDM 520 PD 225 mW Tj,Tstg −55∼+150 ℃ RΘJA 556 ℃/W TL 260 ℃ May,2015 Rev.B 1/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G,S-LBSS84LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) Symbol VBR(DSS) IDSS IGSS Min. 50 – – – – Typ. Max. –– – 0.1 – 15 – 60 – ±10 Unit V μA nA ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = 250μAdc) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) VGS(th) RDS(on) |yfs| 0.8 – 50 – 2.0 V Ohms 5.0 10 mS –– DYNAMIC CHARACTERISTICS Input Capacitance(VDS = 5.0 Vdc) Output Capacitance(VDS = 5.0 Vdc) Transfer Capacitance(VDG = 5.0 Vdc) Ciss – 30 – pF COss – 10 – CRss – 5– SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Rise Time Turn–Off Delay Fall Time Time Time (VDD ID = Ω) = –15 Vdc, –2.5 Adc,RL = 50 Gate Charge td(on) tr td(off) tf QT – 2.5 – – 1– – 16 – – 8– – 6000 – SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS Pulsed Current ISM Forward Voltage (Note 2.) VSD 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. – – – 2. Switching characteristics are independent of operating junction temperature. – – 2.5 0.13 0.52 – ns pC A V May,2015 Rev.B 2/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G,S-LBSS84LT1G ELRCTRICAL CHARACTERISTICS CURVES 0.6 VDS=10V 0.5 ID, Drain Current (A) 0.4 0.3 0.2 0.1 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) 25℃ -55℃ 150℃ FIG.1 Transfer Characteristics RDSon, Drain-to-Source Resistance (Ω) 20 18 VGS=4.5V 16 14 12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, Drain Current (A) VGS=4.5V Tj=25℃ VGS=4.5V Tj=150℃ VGS=4.5V Tj=-55℃ FIG.3 On-Resistance versus Drain Current ID, Drain Current (A) RDSon, Drain-to-Source Resistance (Ω) 0.50 0.45 TJ=25℃ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-to-Source Voltage (V) VGS=2.25V VGS=3V VGS=2.5V VGS=3.25V VGS=2.75V VGS=3.5V FIG.2 On-Region Characteristics 8 7 VGS=10V 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, Drain Current (A) VGS=10V Tj=25℃ VGS=10V Tj=150℃ VGS=10V Tj=-55℃ FIG.4 On-Resistance versus Drain Current May,2015 Rev.B 3/5 RDSon (℃) ID (V) LESHAN RADIO COMPANY, LTD. LBSS84LT1G,S-LBSS84LT1G 9 8 7 6 5 4 3 2 1 -55 -30 -5 20 45 70 Tj (℃) 95 120 145 VGS=4.5V ID=0.13A VGS=10V ID=0.52A FIG.5 On-Resistance Variation with Temperature 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) 150℃ -55℃ 25℃ FIG.6 Body Diode Forward Voltage May,2015 Rev.B 4/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G,S-LBSS84LT1G SOT-23 A L 3 BS 12 VG C D H K 0.037 0.95 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.079 2.0 0.031 0.8 inches mm May,2015 Rev.B 5/5 .


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