Document
LESHAN RADIO COMPANY, LTD.
POWER MOSFET P-CHANNEL 130mAmps,50Volts
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching , power management in portable and battery–
powered products such as computers , printers , cellular and
cordless telephones.
LBSS84LT1G S-LBSS84LT1G
3
●FEATURES 1)Energy Efficient 2)Miniature SOT–23 Surface Mount Package Saves Board Space
3)We declare that the material of product compliant with RoHS requirements and Halogen Free.
4)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1 2
SOT-23
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS84LT1G PD 3000/Tape&Reel
LBSS84LT3G
PD 10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain–to–Source Voltage Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 μs)
Total Power Dissipation @ TA = 25°C
Junction and Storage temperature Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for
SolderingPurposes, for 10 seconds
Symbol Limits Unit
VDSS
50
V
VGS ±20 V
mA
ID 130
IDM 520
PD 225 mW Tj,Tstg −55∼+150 ℃
RΘJA
556 ℃/W
TL 260 ℃
May,2015
Rev.B 1/5
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
Symbol VBR(DSS)
IDSS
IGSS
Min.
50
– – –
–
Typ. Max.
––
– 0.1 – 15 – 60
– ±10
Unit V
μA
nA
ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = 250μAdc) Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
VGS(th) RDS(on)
|yfs|
0.8 – 50
– 2.0
V
Ohms
5.0 10
mS
––
DYNAMIC CHARACTERISTICS Input Capacitance(VDS = 5.0 Vdc) Output Capacitance(VDS = 5.0 Vdc) Transfer Capacitance(VDG = 5.0 Vdc)
Ciss – 30 – pF
COss – 10 –
CRss
–
5–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay
Rise Time Turn–Off Delay
Fall Time
Time Time
(VDD ID = Ω)
= –15 Vdc, –2.5 Adc,RL
=
50
Gate Charge
td(on) tr
td(off) tf QT
– 2.5 – – 1– – 16 – – 8– – 6000 –
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage (Note 2.)
VSD
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
– – –
2. Switching characteristics are independent of operating junction temperature.
– –
2.5
0.13
0.52 –
ns
pC A V
May,2015
Rev.B 2/5
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
ELRCTRICAL CHARACTERISTICS CURVES
0.6
VDS=10V
0.5
ID, Drain Current (A)
0.4
0.3
0.2
0.1
0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
25℃
-55℃
150℃
FIG.1 Transfer Characteristics
RDSon, Drain-to-Source Resistance (Ω)
20
18 VGS=4.5V
16 14 12 10
8 6 4 2 0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, Drain Current (A)
VGS=4.5V Tj=25℃
VGS=4.5V Tj=150℃
VGS=4.5V Tj=-55℃
FIG.3 On-Resistance versus Drain Current
ID, Drain Current (A)
RDSon, Drain-to-Source Resistance (Ω)
0.50
0.45 TJ=25℃
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-to-Source Voltage (V)
VGS=2.25V VGS=3V
VGS=2.5V VGS=3.25V
VGS=2.75V VGS=3.5V
FIG.2 On-Region Characteristics
8
7 VGS=10V
6
5
4
3
2
1
0 0 0.1 0.2 0.3 0.4 0.5 0.6
ID, Drain Current (A)
VGS=10V Tj=25℃
VGS=10V Tj=150℃
VGS=10V Tj=-55℃
FIG.4 On-Resistance versus Drain Current
May,2015
Rev.B 3/5
RDSon (℃) ID (V)
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
9 8 7 6 5 4 3 2 1
-55 -30 -5
20 45 70 Tj (℃)
95 120 145
VGS=4.5V ID=0.13A VGS=10V ID=0.52A
FIG.5 On-Resistance Variation with Temperature
1
0.1
0.01
0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
150℃
-55℃
25℃
FIG.6 Body Diode Forward Voltage
May,2015
Rev.B 4/5
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
SOT-23
A L
3 BS
12
VG
C
D
H K
0.037 0.95
0.035 0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
May,2015
Rev.B 5/5
.