L2N7002SLT1G Signal MOSFET Datasheet

L2N7002SLT1G Datasheet, PDF, Equivalent


Part Number

L2N7002SLT1G

Description

Small Signal MOSFET

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download L2N7002SLT1G Datasheet


L2N7002SLT1G
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
VGS
VGSM
±20 Vdc
±40 Vpk
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
ā55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002SLT1G
L2N7002SLT3G
703 3000 Tape & Reel
703 10000 Tape & Reel
L2N7002SLT1G
3
1
2
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
N - Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
703
W
12
Gate Source
703 = Device Code
W = Work Week
1/4

L2N7002SLT1G
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
ID(on)
VDS(on)
rDS(on)
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
IS
ISM
Min
60
1.0
500
80
L2N7002SLT1G
Typ Max Unit
– – Vdc
– 1.0 µAdc
– 500
– 100 nAdc
– –100 nAdc
1.8 2.0 Vdc
– – mA
Vdc
– 3.75
– 0.375
Ohms
1.5 2.0
1.5 2.5
– – mmhos
17 50 pF
10 25 pF
2.5 5.0 pF
7 20 ns
11 40 ns
– –1.5 Vdc
– –115 mAdc
– –800 mAdc
2/4


Features LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • We declare that the mater ial of product compliance with RoHS req uirements. MAXIMUM RATINGS Rating Drai n–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Con tinuous TC = 25°C (Note 1.) – Contin uous TC = 100°C (Note 1.) – Pulsed ( Note 2.) Gate–Source Voltage – Cont inuous – Non–repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS Characteri stic Total Device Dissipation FR–5 Bo ard (Note 3.) TA = 25°C Derate above 2 5°C Thermal Resistance, Junction to Am bient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate a bove 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temper ature Symbol VDSS VDGR ID ID IDM Valu e 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc VGS VGSM ±20 Vdc ±40 Vpk Symb ol PD Max 225 1.8 Unit mW mW/°C Rθ JA PD RθJA TJ, Tstg 556 300 2.4 417 ā55 to +150 °C/W mW mW/°C °C/W °C 1. The Power Dissipation of the package may result in a lower continuous.
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