N-Channel PowerTrench MOSFET
N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part FDP085N10A
V(BR)DSS 100V
IDn 96A
RDS(on) Max 8.5mΩ1
Die S...
Description
N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part FDP085N10A
V(BR)DSS 100V
IDn 96A
RDS(on) Max 8.5mΩ1
Die Size 2.4 x 4.4 mm2
See page 2 for ordering part numbers & supply formats
FDP085N10A
Applications
Features
High density AC / DC Converters Motor drives & Micro Inverters
High Power & Current Handling Capability Low RDS (on) per mm2
Maximum Ratings
Low Gate Charge, Fast Switching
Symbol VDSS VGSS ID
IDM TJ, TSTG
EAS
dv/dt
Parameter
Drain to Source Voltage
Drain Current2
Gate to Source Voltage Continuous (TC = 25°C)
Drain Current3
Continuous (TC = 100°C) Pulsed
Operation Junction & Storage Temperature
Single Pulsed Avalanche Energy4
Peak Diode Recovery dv/dt4
L = 3mH, IAS = 13.4A, RG=25Ω Starting TJ =25°C
ISD ≤ 96A, di/dt ≤ 200A/µs, VDD ≤ BVDSS Starting TJ=25°C
Ratings 100 ±20 96 68 384
-55 to 175 269
6
Units V V
A
°C mJ
V/ns
Static Characteristics, TJ = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
BVDSS VGS(th) IDSS
IGSS RDS(on)
Drain to Source Breakdown Voltage Gate threshold Voltage
Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current @ 150°C
Gate to Body Leakage Current Static Drain to Source On Resistance1
ID = 250µA, VGS = 0V VGS = VDS, ID =250µA VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V VGS = ±20V , VDS = 0V VGS = 10V, ID = 96A
100 2.0 -
Notes: 1. Defined by chip design, not subject to 100% production test at wafer level 2. Performance will vary based on assembly technique a...
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