MOS FET. NP82N06PDG Datasheet

NP82N06PDG FET. Datasheet pdf. Equivalent

Part NP82N06PDG
Description N-CHANNEL POWER MOS FET
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The.
Manufacture Renesas
Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING NP82N06PDG Datasheet
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NP82N06PDG
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06PDG-E1-AY Note
NP82N06PDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
Note See “TAPE INFORMATION
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
Low Ciss
Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±270
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C)
PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR 37
Repetitive Avalanche Energy Note2
EAR 137
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2006



NP82N06PDG
NP82N06PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
VGS = 5 V, ID = 41 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
td(on)
f = 1 MHz
VDD = 30 V
Rise Time
tr ID = 41 A
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
VGS = 10 V
RG = 0 Ω
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 82 A
IF = 82 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr IF = 82 A, VGS = 0 V
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
1 μA
±100 nA
1.5 2.0 2.5 V
19 45
S
5.1 6.7 mΩ
6.0 8.5 mΩ
5700
pF
420 pF
275 pF
28 ns
22 ns
79 ns
9 ns
106 nC
29 nC
35 nC
0.9 1.5 V
43 ns
65 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18227EJ1V0DS





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