NP82N06PDG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) Low Ciss Ciss = 5700 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±82 ±270 Total Power Dissipation (TC = 25°C) PT1 143 Total Power Dissipation (TA = 25°C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 37 Repetitive Avalanche Energy Note2 EAR 137 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.05 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every co...