IRF6646TRPbF

PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS 80V max Typical values (unless otherwise specified) VGS RDS(on) ±20V max 7.6mΩ@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 36nC 12nC 2.0nC 48nC 18nC 3.8V MN DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MN Description The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI...