FDP085N10A

FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ November 2013 Features RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A Fast Switching Speed Low Gate Charge, QG = 31 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDP085N10A_F102 100 ±20 96 68 384 269 6.0 188 1.25 -55 to +175 300 Unit V V A A mJ V/ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max....