PowerTrench MOSFET. FDP085N10A Datasheet

FDP085N10A Datasheet PDF, Equivalent


Part Number

FDP085N10A

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDP085N10A Datasheet PDF


FDP085N10A Datasheet
FDP085N10A
N-Channel PowerTrench® MOSFET
100 V, 96 A, 8.5 mΩ
November 2013
Features
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP085N10A_F102
100
±20
96
68
384
269
6.0
188
1.25
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP085N10A_F102
0.8
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
1
www.fairchildsemi.com

FDP085N10A Datasheet
Package Marking and Ordering Information
Part Number
FDP085N10A_F102
Top Mark
FDP085N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V,TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 96 A
VDS = 10 V, ID = 96 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Releted Output Capacitance
Total Gate Charge at 10V
Gaeter to Source Gate Charge
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VGS = 10 V, VDS = 50 V,
ID = 96 A
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.07
-
-
-
-
7.35
72
2025
468
20
752
31
9.7
5.0
7.5
0.97
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 96 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 96 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDD = 50 V,VGS = 0 V, ISD = 96 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 13.4 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 96 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
18
22
29
8
-
-
-
59
80
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
8.5 mΩ
-S
2695
620
-
-
40
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
46 ns
54 ns
68 ns
26 ns
96 A
384 A
1.3 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP085N10A — N-Channel PowerTrench® M OSFET FDP085N10A N-Channel PowerTrench ® MOSFET 100 V, 96 A, 8.5 mΩ Novembe r 2013 Features • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A • Fas t Switching Speed • Low Gate Charge, QG = 31 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS (on) • High Power and Current Handlin g Capability • RoHS Compliant Descri ption This N-Channel MOSFET is produced using Fairchild Semiconductor’s Powe rTrench® process that has been tailore d to minimize the on-state resistance w hile maintaining superior switching per formance. Applications • Synchronous Rectification for ATX / Server / Teleco m PSU • Battery Protection Circuit Motor Drives and Uninterruptible Powe r Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless other wise noted. Symbol VDSS VGSS ID IDM EA S dv/dt PD TJ, TSTG TL Parameter Drai n to Source Voltage Gate to Source Vol tage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pul.
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