STP6NK50Z. P6NK50Z Datasheet

P6NK50Z STP6NK50Z. Datasheet pdf. Equivalent

Part P6NK50Z
Description STP6NK50Z
Feature STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected S.
Manufacture STMicroelectronics
Datasheet
Download P6NK50Z Datasheet

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6 P6NK50Z Datasheet
Recommendation Recommendation Datasheet P6NK50Z Datasheet





P6NK50Z
STP6NK50Z - STF6NK50Z
STD6NK50Z
N-CHANNEL 500V - 0.93- 5.6A TO-220/TO-220FP/DPAK
Zener-Protected SuperMESH™ MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP6NK50Z
STF6NK50Z
STD6NK50Z
500 V
500 V
500 V
< 1.2
< 1.2
< 1.2
5.6 A
5.6 A
5.6 A
90 W
25 W
90 W
s TYPICAL RDS(on) = 0.93
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDER CODES
PART NUMBER
STP6NK50Z
STF6NK50Z
STD6NK50ZT4
April 2004
MARKING
P6NK50Z
F6NK50Z
D6NK50Z
PACKAGE
TO-220
TO-220FP
DPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
1/12



P6NK50Z
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 5.6A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
STP6NK50Z
STD6NK50Z
STF6NK50Z
500
500
± 30
5.6 5.6 (*)
3.5 3.5 (*)
22.4
22.4 (*)
90 25
0.72
0.2
3000
4.5
- 2500
-55 to 150
TO-220
DPAK
1.38
62.5
300
TO-220FP
5
Max Value
5.6
180
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C/W
°C/W
°C
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source Breakdown Igs=± 1mA (Open Drain)
Voltage
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12





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