D235

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD235 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 50 40 6 3 1.5 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD235 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=50mA VBEsat Base-emitter saturation voltage IC=1A; IB=50mA ICBO Collector cut-off current VCB=40V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=0.5A ; VCE=1V COB Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=0.5A ; VCE=10V MIN TYP. MAX UNIT 40 V 50 V 6V 1.0 V 1.5 V 10 µA 10 µA 40 240 90 pF 3 MHz hFE Classifications ROY 40-80 70-140 120-240 2 Savan...