9R340C Datasheet: IPB90R340C3





9R340C IPB90R340C3 Datasheet

Part Number 9R340C
Description IPB90R340C3
Manufacture Infineon
Total Page 10 Pages
PDF Download Download 9R340C Datasheet PDF

Features: CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for industrial applications • Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summa ry VDS @ TJ=25°C RDS(on),max @TJ=25°C Qg,typ IPB90R340C3 900 V 0.34 W 94 nC PG-TO263 CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forwa rd topologies • SMPS • PC Silverbox • Lighting • Solar Type IPB90R340 C3 Package PG-TO263 Marking 9R340C M aximum ratings, at T J=25 °C, unless o therwise specified Parameter Symbol C onditions Continuous drain current I D T C=25 °C Pulsed drain current 2) I D,pulse T C=100 °C T C=25 °C Aval anche energy, single pulse E AS Avala nche energy, repetitive t AR 2),3) E AR Avalanche current, repetitive t AR 2) ,3) I AR I D=3.1 A, V DD=50 V I D=3.1 A, V DD=50 V MOSFET dv /dt ruggedness dv /dt V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation P tot.

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CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
VDS @ TJ=25°C
RDS(on),max @TJ=25°C
Qg,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16

                    
        






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