IPB90R340C3. 9R340C Datasheet

9R340C IPB90R340C3. Datasheet pdf. Equivalent

Part 9R340C
Description IPB90R340C3
Feature CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High pe.
Manufacture Infineon
Datasheet
Download 9R340C Datasheet

CoolMOS™ Power Transistor Features • Lowest figure-of-merit 9R340C Datasheet
Recommendation Recommendation Datasheet 9R340C Datasheet





9R340C
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
VDS @ TJ=25°C
RDS(on),max @TJ=25°C
Qg,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16



9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current 2)
Reverse diode dv /dt 4)
Symbol
Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB90R340C3
Value
9.2
34
4
Unit
A
V/ns
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction -
ambient
R thJA
R thJA
Soldering temperature, only reflow
soldering allowed; part not qualified
for direct wave soldering but bottom
side PCB wave soldering is allowed
T sold
SMD version, device
on PCB: at minimum
footprint
SMD version, device
on PCB: at 6 cm²
cooling area 5)
reflow MSL1
-
-
-
-
- 0.6 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Rev. 2.0
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=1 mA
I DSS
I GSS
V DS=900 V, V GS=0 V,
T j=25 °C
V DS=900 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.2 A,
T j=25 °C
V GS=10 V, I D=9.2 A,
T j=150 °C
R G f =1 MHz, open drain
page 2
900
2.5
-
-
-
-
-
-
- -V
3 3.5
- 2 µA
20 -
- 100 nA
0.28 0.34 W
0.76 -
1.3 - W
2012-04-16





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