CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated
• High peak current capabilit...
CoolMOS™ Power
Transistor
Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated
High peak current capability Qualified according to JEDEC1) for industrial applications Pb-free lead plating; RoHS compliant Ultra low gate charge
Product Summary VDS @ TJ=25°C RDS(on),max @TJ=25°C Qg,typ
IPB90R340C3
900 V 0.34 W 94 nC
PG-TO263
CoolMOS™ 900V is designed for:
Quasi Resonant Flyback / Forward topologies SMPS PC Silverbox Lighting Solar
Type IPB90R340C3
Package PG-TO263
Marking 9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value 15 9.5 34 678 1 3.1 50 ±20 ±30 208
-55 ... 150
Unit A
mJ
A V/ns V
W °C 2012-04-16
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4)
Symbol
Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPB90R340C3
Value 9.2 34 4
Unit A
V/ns
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Thermal characteristics Ther...