IPB90R340C3

CoolMOS™ Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for industrial applications Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summary VDS @ TJ=25°C RDS(on),max @TJ=25°C Qg,typ IPB90R340C3 900 V 0.34 W 94 nC PG-TO263 CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies SMPS PC Silverbox Lighting Solar Type IPB90R340C3 Package PG-TO263 Marking 9R340C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current 2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse E AS Avalanche energy, repetitive t AR 2),3) E AR Avalanche current, repetitive t AR 2),3) I AR I D=3.1 A, V DD=50 V I D=3.1 A, V DD=50 V MOSFET dv /dt ruggedness dv /dt V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T J, T stg Rev. 2.0 page 1 Value 15 9.5 34 678 1 3.1 50 ±20 ±30 208 -55 ... 150 Unit A mJ A V/ns V W °C 2012-04-16 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPB90R340C3 Value 9.2 34 4 Unit A V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Ther...