PowerTrench SyncFET. FDMS2504SDC Datasheet

FDMS2504SDC SyncFET. Datasheet pdf. Equivalent

Part FDMS2504SDC
Description N-Channel Dual Cool PowerTrench SyncFET
Feature FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2504SDC N-Channel Dual CoolTM PowerTre.
Manufacture Fairchild Semiconductor
Datasheet
Download FDMS2504SDC Datasheet

FDMS2504SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FD FDMS2504SDC Datasheet
Recommendation Recommendation Datasheet FDMS2504SDC Datasheet





FDMS2504SDC
FDMS2504SDC
N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V, 49 A, 1.25 mΩ
July 2013
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A
„ Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A
„ High performance technology for extremely low rDS(on)
„ SyncFET Schottky Body Diode
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
dv/dt
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 5)
(Note 1a)
2S
1S
Ratings
25
±20
49
235
42
200
288
1.5
104
3.3
-55 to +150
Units
V
V
A
mJ
V/ns
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.6
1.2
38
81
16
23
11
°C/W
Device Marking
Device
2504S
FDMS2504SDC
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com



FDMS2504SDC
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 32 A
VGS = 4.5 V, ID = 28 A
VGS = 10 V, ID = 32 A, TJ = 125 °C
VDD = 5 V, ID = 32 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 32 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 32 A
(Note 2)
(Note 2)
IF = 32 A, di/dt = 300 A/μs
Min
25
1.2
Typ
21
1.6
-5
1.0
1.4
1.4
221
5843
1615
317
0.5
18
9
44
5
85
39
16.5
9.7
0.38
0.75
39
52
Max Units
V
mV/°C
500 μA
100 nA
3.0
1.25
1.75
1.8
V
mV/°C
mΩ
S
7770
2150
475
1.0
pF
pF
pF
Ω
33 ns
18 ns
70 ns
10 ns
119 nC
55 nC
nC
nC
0.7
V
1.2
63 ns
84 nC
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C1
2
www.fairchildsemi.com





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