NP109N04PUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) High current rating ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TC = 25°C) PT1 220 Total Power Dissipation (TA = 25°C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 60 Repetitive Avalanche Energy Note2 EAR 360 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are avail...