Power MOSFETs. IRFU4620PbF Datasheet

IRFU4620PbF MOSFETs. Datasheet pdf. Equivalent

Part IRFU4620PbF
Description Power MOSFETs
Feature PD -96207A IRFR4620PbF IRFU4620PbF Applications l High Efficiency Synchronous Rectification in SMPS.
Manufacture International Rectifier
Datasheet
Download IRFU4620PbF Datasheet

PD -96207A IRFR4620PbF IRFU4620PbF Applications l High Effi IRFU4620PbF Datasheet
Recommendation Recommendation Datasheet IRFU4620PbF Datasheet





IRFU4620PbF
PD -96207A
IRFR4620PbF
IRFU4620PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
200V
64m:
78m:
S ID
24A
DD
S
G
DPak
IRFR4620PbF
S
D
G
IPAK
IRFU4620PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through ˆ are on page 11
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D
Drain
Max.
24
17
100
144
0.96
± 20
54
-55 to + 175
300
113
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
06/08/09



IRFU4620PbF
IRFR/U4620PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
200
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
37
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
gCoss eff. (TR) Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.23
64
–––
–––
–––
–––
–––
2.6
Typ.
–––
25
8.2
7.9
17
13.4
22.4
25.4
14.8
1710
125
30
113
317
Max. Units
Conditions
–––
–––
78
5.0
20
250
100
-100
V VGS = 0V, ID = 250µA
™V/°C Reference to 25°C, ID = 5mA
fmVGS = 10V, ID = 15A
V VDS = VGS, ID = 100µA
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 15A
38 ID = 15A
f–––
–––
nC
VDS = 100V
VGS = 10V
––– ID = 15A, VDS =0V, VGS = 10V
––– VDD = 130V
f–––
–––
ns
ID = 15A
RG = 7.3
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
h––– VGS = 0V, VDS = 0V to 160V (See Fig.11)
g––– VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 100
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
fV TJ = 25°C, IS = 15A, VGS = 0V
D
S
–––
–––
78
99
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
294
432
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 15A
di/dt = 100A/µs
––– 7.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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