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FDP053N08B Dataheets PDF



Part Number FDP053N08B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP053N08B DatasheetFDP053N08B Datasheet (PDF)

FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ June 2014 Features • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

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FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ June 2014 Features • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Package limitation current is 75A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDP053N08B 80 ±20 120* 85.2* 75 480 365 6.0 146 0.97 -55 to +175 300 FDP053N08B 1.03 62.5 Unit V V A A mJ V/ns W W/oC oC oC Unit oC/W ©2012 Fairchild Semiconductor Corporation FDP053N08B Rev. C3 1 www.fairchildsemi.com FDP053N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDP053N08B_F102 Top Mark FDP053N08B Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 64 V, VGS = 0 V VDS = 64 V, TC = 150oC VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 75 A VDS = 10 V, ID = 75 A Dynamic Characteristics Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgd Vplateau Qsync Qoss ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Gate Plateau Volatge Total Gate Charge Sync. Output Charge Equivalent Series Resistance (G-S) VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 0 V VDS = 40 V, ID = 75 A, VGS = 10 V VDS = 0 V, ID = 37.5 A VDS = 40 V, VGS = 0 V f = 1 MHz (Note 4) Min. 80 - 2.5 - - Typ. 0.089 - 4.2 100 4480 740 20.5 1333 65.4 26.7 15.3 6.0 52.4 64.2 1.2 Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 40 V, ID = 75 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, VDD = 40 V, ISD = 75 A, dIF/dt = 100 A/μs Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 15.6 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. - - 32 30 44 16 59.3 62.5 Quantity 50 units Max. Unit - - 1 500 ±100 V V/oC μA nA 4.5 V 5.3 mΩ -S 5960 985 85 - pF pF pF pF nC nC nC V nC nC Ω 74 ns 70 ns 98 ns 42 ns 120* 480 1.3 - A A V ns nC ©2012 Fairchild Semiconductor Corporation FDP053N08B Rev. C3 2 www.fairchildsemi.com FDP053N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 400 100 ID, Drain Current[A] RDS(ON) [mΩ], Drain-Source On-Resistance VGS = 15.0V 10 10.0V 8.0V 7.0V *Notes: 1. 250μs Pulse Test 2. TC = 25oC 1 0.1 1 6.5V 6.0V 5.5V 5.0V VDS, Drain-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6.0 5.5 5.0 4.5 VGS = 10V 4.0 3.5 3.0 0 VGS = 20V *Note: TC = 25oC 90 180 270 360 ID, Drain Current [A] 450 Figure 5. Capacitance Characteristics 10000 1000 Ciss *Note: 100 1. VGS = 0V 2. f = 1MHz Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 Crss 10 VDS, Drain-Sour.


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