Document
FDP053N08B — N-Channel PowerTrench® MOSFET
FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
June 2014
Features
• RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 62.5 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 75A.
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FDP053N08B 80 ±20 120*
85.2* 75 480 365 6.0 146 0.97
-55 to +175 300
FDP053N08B 1.03 62.5
Unit V V
A
A mJ V/ns W W/oC oC oC
Unit oC/W
©2012 Fairchild Semiconductor Corporation FDP053N08B Rev. C3
1
www.fairchildsemi.com
FDP053N08B — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDP053N08B_F102
Top Mark FDP053N08B
Package TO-220
Packing Method Tube
Reel Size N/A
Tape Width N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS / ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC
VDS = 64 V, VGS = 0 V VDS = 64 V, TC = 150oC VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 75 A VDS = 10 V, ID = 75 A
Dynamic Characteristics
Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgd
Vplateau
Qsync Qoss ESR
Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Gate Plateau Volatge Total Gate Charge Sync. Output Charge Equivalent Series Resistance (G-S)
VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 0 V
VDS = 40 V, ID = 75 A, VGS = 10 V
VDS = 0 V, ID = 37.5 A VDS = 40 V, VGS = 0 V f = 1 MHz
(Note 4)
Min.
80 -
2.5 -
-
Typ.
0.089
-
4.2 100
4480 740 20.5 1333 65.4 26.7 15.3 6.0 52.4 64.2 1.2
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 40 V, ID = 75 A, VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 40 V, ISD = 75 A, dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 15.6 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
-
-
32 30 44 16
59.3 62.5
Quantity 50 units
Max. Unit
-
-
1 500 ±100
V V/oC
μA nA
4.5 V 5.3 mΩ
-S
5960 985
85 -
pF pF pF pF nC nC nC V nC nC
Ω
74 ns 70 ns 98 ns 42 ns
120* 480 1.3
-
A A V ns nC
©2012 Fairchild Semiconductor Corporation FDP053N08B Rev. C3
2
www.fairchildsemi.com
FDP053N08B — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
100
ID, Drain Current[A]
RDS(ON) [mΩ], Drain-Source On-Resistance
VGS = 15.0V 10 10.0V
8.0V
7.0V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC 1 0.1
1
6.5V 6.0V 5.5V 5.0V
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
6.0
5.5
5.0
4.5 VGS = 10V
4.0 3.5 3.0
0
VGS = 20V
*Note: TC = 25oC
90 180 270 360 ID, Drain Current [A]
450
Figure 5. Capacitance Characteristics
10000
1000
Ciss
*Note: 100 1. VGS = 0V
2. f = 1MHz
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10 0.1
1
Crss 10
VDS, Drain-Sour.