Power MOSFETs. AUIRFB4410 Datasheet

AUIRFB4410 MOSFETs. Datasheet pdf. Equivalent

Part AUIRFB4410
Description Power MOSFETs
Feature Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dV/dT Rating ● 175°C Oper.
Manufacture International Rectifier
Datasheet
Download AUIRFB4410 Datasheet

Features ● Advanced Process Technology ● Ultra Low On-Resist AUIRFB4410 Datasheet
Recommendation Recommendation Datasheet AUIRFB4410 Datasheet





AUIRFB4410
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
D
G
S
PD - 97598
AUIRFB4410
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
8.0m
10m
88A
75A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
Gate
GDS
TO-220AB
AUIRFB4410
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Max.
88™
63
75
380
200
Units
A
W
Linear Derating Factor
1.3 W/°C
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
± 20
19
V
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x10lb in (1.1N m)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA Junction-to-Ambient
220
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
Max.
0.61
–––
62
mJ
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/23/2010



AUIRFB4410
AUIRFB4410
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– –––
––– 0.094 –––
––– 8.0 10
2.0 ––– 4.0
120 ––– –––
––– 1.5 –––
V VGS = 0V, ID = 250µA
dV/°C Reference to 25°C, ID = 1mA
gmVGS = 10V, ID = 58A
V VDS = VGS, ID = 150µA
S VDS = 50V, ID = 58A
f = 1MHz, open drain
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 120 180
Qgs Gate-to-Source Charge
––– 31 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 44 –––
td(on)
Turn-On Delay Time
––– 24 –––
tr Rise Time
––– 80 –––
td(off)
Turn-Off Delay Time
––– 55 –––
tf Fall Time
––– 50 –––
Ciss Input Capacitance
––– 5150 –––
Coss Output Capacitance
––– 360 –––
Crss Reverse Transfer Capacitance
––– 190 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 –––
hCoss eff. (TR) Effective Output Capacitance (Time Related) ––– 500 –––
Diode Characteristics
nC ID = 58A
gVDS = 80V
VGS = 10V
ns VDD = 65V
ID = 58A
gRG = 4.1
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 80V , See Fig.11
hVGS = 0V, VDS = 0V to 80V , See Fig. 5
Symbol
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
™––– ––– 88
A MOSFET symbol
D
(Body Diode)
showing the
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 380 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 58A, VGS = 0V
S
––– 38 56 ns TJ = 25°C
VR = 85V,
––– 51 77
TJ = 125°C
––– 61 92 nC TJ = 25°C
gIF = 58A
di/dt = 100A/µs
––– 110 170
TJ = 125°C
––– 2.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 25, IAS = 58A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‰ Rθ is measured at TJ approximately 90°C.
above this value.
„ ISD 58A, di/dt 650A/µs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400µs; duty cycle 2%.
2 www.irf.com





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