Power MOSFETs. IRF1407SPbF Datasheet

IRF1407SPbF MOSFETs. Datasheet pdf. Equivalent

Part IRF1407SPbF
Description Power MOSFETs
Feature PD -95486 IRF1407SPbF Benefits O Advanced Process Technology O Ultra Low On-Resistance O Dynamic.
Manufacture International Rectifier
Datasheet
Download IRF1407SPbF Datasheet

PD -95486 IRF1407SPbF Benefits O Advanced Process Technolo IRF1407SPbF Datasheet
  IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Techn IRF1407SPbF Datasheet
Recommendation Recommendation Datasheet IRF1407SPbF Datasheet





IRF1407SPbF
PD -95486
IRF1407SPbF
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10Vˆ
Continuous Drain Current, VGS @ 10Vˆ
Pulsed Drain Current ˆ
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚ˆ
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒˆ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
IRF1407LPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0078
ID = 100A†
S
D2Pak
IRF1407S
TO-262
IRF1407L
Max.
100†
70†
520
3.8
200
1.3
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com
1
06/30/04



IRF1407SPbF
IRF1407S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
75 ––– ––– V
––– 0.09 ––– V/°C
––– ––– 0.0078
2.0 ––– 4.0 V
74 ––– ––– S
––– ––– 20 µA
––– ––– 250
––– ––– 200
nA
––– ––– -200
––– 160 250
––– 35 52 nC
––– 54 81
––– 11 –––
––– 150 –––
ns
––– 150 –––
––– 140 –––
LD Internal Drain Inductance
LS Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
Ciss Input Capacitance
––– 5600
Coss
Output Capacitance
––– 890
Crss Reverse Transfer Capacitance
––– 190
Coss
Output Capacitance
––– 5800
Coss
Output Capacitance
––– 560
Coss eff. Effective Output Capacitance …
––– 1100
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
–––
–––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ˆ
VGS = 10V, ID = 78A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 78A ˆ
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10V„ˆ
VDD = 38V
ID = 78A
RG = 2.5
VGS = 10V „ˆ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0KHz, See Fig. 5 ˆ
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
VGS = 0V, VDS = 60V, ƒ = 1.0KHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 100†
––– ––– 520
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V „
––– 110 170 ns TJ = 25°C, IF = 78A
––– 390 590 nC di/dt = 100A/µs „ˆ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.13mH
RG = 25, IAS = 78A. (See Figure 12).
ƒ ISD 78A, di/dt 320A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ Uses IRF1407 data and test conditions.
2 www.irf.com





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