FDB2532_F085

FDB2532_F085 N-Channel PowerTrench® MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Formerly developmental type 82884 September 2010 Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems GATE DRAIN (FLANGE) D SOURCE TO-263AB FDB SERIES G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature S Ratings 150 ±20 79 56 8 Figure 4 400 310 2.07 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.48 43 oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. F...