Effect Transistor. NDS9405 Datasheet

NDS9405 Transistor. Datasheet pdf. Equivalent

Part NDS9405
Description Single P-Channel Enhancement Mode Field Effect Transistor
Feature N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor February 1996 General Descript.
Manufacture ETC
Datasheet
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N NDS9405 Single P-Channel Enhancement Mode Field Effect Tra NDS9405 Datasheet
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NDS9405
N
NDS9405
Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
-4.3A, -20V. RDS(ON) = 0.10@ VGS = -10V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed
TA = 25°C
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS9405
-20
± 20
± 4.3
± 3.3
± 20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS9405.SAM



NDS9405
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -2 A
VGS = -4.5 V, ID = -2 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -10 V, VDS = -5 V
VGS = -4.5, VDS = -5V
VDS = -15 V, ID = -4.3 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6
VDS = -10 V,
ID = -4.3 A, VGS = -10 V
Min Typ Max Units
-20
TJ = 55°C
V
-2 µA
-25 µA
100 nA
-100 nA
TJ= 125°C
TJ= 125°C
TJ= 125°C
-0.5 -1.65
-0.85
0.053
0.075
0.08
0.12
-20
-5
9
-3
-2.6
0.1
0.15
0.16
0.24
V
A
S
1425
850
430
pF
pF
pF
17 30 ns
24 80 ns
56 200 ns
30 200 ns
40 nC
5 nC
25 nC
NDS9405.SAM





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