Single P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used
surface mount package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
TA = 25°C
Maximum Power Dissipation
TJ,TSTG Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
-55 to 150