Document
R6035KNZ1
Nch 600V 35A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.102Ω ±35A 379W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant
lOutline
TO-247
lInner circuit
lPackaging specifications Packing
Tube
Reel size (mm)
-
lApplication Switching
Tape width (mm) Type
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6035KNZ1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
600 ±35 ±105
V A A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS 6.6 A
Avalanche energy, single pulse
EAS*3
796 mJ
Power dissipation (Tc = 25°C)
PD 379 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20150914 - Rev.001
R6035KNZ1
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min. Typ. Max.
- - 0.33 ℃/W
- - 30 ℃/W
- - 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 18.1A RDS(on)*5 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
Values Unit
Min. Typ. Max.
600 - - V
- - 100 μA - - 1000 - - ±100 nA 3 - 5V
- 0.092 0.102 Ω - 0.200 - 1.0 - Ω
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20150914 - Rev.001
R6035KNZ1
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Forward Transfer Admittance
|Yfs|*5 VDS = 10V, ID = 17.5A
11 22
-
S
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*5 tr*5 td(off)*5 tf*5
VGS = 0V VDS = 25V f = 1MHz VDD ⋍ 300V, VGS = 10V ID = 17.5A RL ⋍ 17.4Ω RG = 10Ω
- 3000 - 2300 - 80 - 45 - 150 - 90 - 95 -
pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*5 Qgs*5 Qgd*5 V(plateau)
VDD ⋍ 300V ID = 35A VGS = 10V VDD ⋍ 300V, ID = 35A
Values Min. Typ. Max.
- 72 - 20 - 30 - 6.6 -
Unit nC V
*1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒500μH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed
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20150914 - Rev.001
R6035KNZ1
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Continuous forward current
Pulse forward current
Symbol
Conditions
IS*1 TC = 25℃
ISP*2
Min. -
Values Typ.
-
-
Max. 35 105
Forward voltage
VSD*5 VGS = 0V, IS = 35A
-
- 1.5
Reverse recovery time Reverse recovery charge Peak reverse recovery current
trr*5
Qrr*5
IS = 35A di/dt = 100A/μs
Irrm*5
- 605 - 14.5 - 45 -
Unit
A
A V ns μC A
lTypical transient thermal characteristics
Symbol
Value
Unit
Rth1 0.151
Rth2
0.428
K/W
Rth3 0.250
Symbol Cth1 Cth2 Cth3
Value 0.018 0.400 15.4
Unit
Ws/K
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20150914 - Rev.001
R6035KNZ1
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature
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20150914 - Rev.001
R6035KNZ1
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Datasheet
Fig.5 Typical Output Characteristics(II)
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20150914 - Rev.001
R6035KNZ1
lElectrical characteristic curves
Fig.6 Breakdown Voltage vs. Junction Temperature
.