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R6035KNZ1 Dataheets PDF



Part Number R6035KNZ1
Manufacturers Rohm
Logo Rohm
Description N-channel MOSFET
Datasheet R6035KNZ1 DatasheetR6035KNZ1 Datasheet (PDF)

R6035KNZ1   Nch 600V 35A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.102Ω ±35A 379W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-247          lInner circuit   lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6035KNZ1 lAbsolute maximum ratings (Ta = 25°C ,unless other.

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R6035KNZ1   Nch 600V 35A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.102Ω ±35A 379W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-247          lInner circuit   lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6035KNZ1 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 ±35 ±105 V A A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 6.6 A Avalanche energy, single pulse EAS*3 796 mJ Power dissipation (Tc = 25°C) PD 379 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150914 - Rev.001     R6035KNZ1            lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s                 Datasheet                      Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 0.33 ℃/W - - 30 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 18.1A RDS(on)*5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min. Typ. Max. 600 - - V     - - 100 μA - - 1000 - - ±100 nA 3 - 5V     - 0.092 0.102 Ω - 0.200 - 1.0 - Ω                                                                                           www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/12 20150914 - Rev.001 R6035KNZ1                            Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Transfer Admittance |Yfs|*5 VDS = 10V, ID = 17.5A 11 22 - S Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*5 tr*5 td(off)*5 tf*5 VGS = 0V VDS = 25V f = 1MHz VDD ⋍ 300V, VGS = 10V ID = 17.5A RL ⋍ 17.4Ω RG = 10Ω - 3000 - 2300 - 80 - 45 - 150 - 90 - 95 - pF ns lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*5 Qgs*5 Qgd*5 V(plateau) VDD ⋍ 300V ID = 35A VGS = 10V VDD ⋍ 300V, ID = 35A Values Min. Typ. Max. - 72 - 20 - 30 - 6.6 - Unit nC V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒500μH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed                                                                                           www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150914 - Rev.001 R6035KNZ1                 Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Continuous forward current Pulse forward current Symbol Conditions IS*1 TC = 25℃ ISP*2 Min. - Values Typ. - - Max. 35 105 Forward voltage VSD*5 VGS = 0V, IS = 35A - - 1.5 Reverse recovery time Reverse recovery charge Peak reverse recovery current trr*5 Qrr*5 IS = 35A di/dt = 100A/μs Irrm*5 - 605 - 14.5 - 45 - Unit A A V ns μC A lTypical transient thermal characteristics Symbol Value Unit Rth1 0.151 Rth2 0.428 K/W Rth3 0.250 Symbol Cth1 Cth2 Cth3 Value 0.018 0.400 15.4       Unit Ws/K                                                                                            www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150914 - Rev.001 R6035KNZ1        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating     Curve vs. Junction Temperature                                                                                            www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150914 - Rev.001 R6035KNZ1        lElectrical characteristic curves Fig.4 Typical Output Characteristics(I)          Datasheet Fig.5 Typical Output Characteristics(II)                                                                                            www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150914 - Rev.001 R6035KNZ1        lElectrical characteristic curves Fig.6 Breakdown Voltage vs.      Junction Temperature .


NCN5110 R6035KNZ1 SCBD-10-63HP


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