N-channel MOSFET. R6035KNZ1 Datasheet

R6035KNZ1 MOSFET. Datasheet pdf. Equivalent

Part R6035KNZ1
Description N-channel MOSFET
Feature R6035KNZ1   Nch 600V 35A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.102Ω ±35A 379W.
Manufacture Rohm
Datasheet
Download R6035KNZ1 Datasheet

R6035KNZ1   Nch 600V 35A Power MOSFET    Datasheet VDSS RD R6035KNZ1 Datasheet
Recommendation Recommendation Datasheet R6035KNZ1 Datasheet





R6035KNZ1
R6035KNZ1
  Nch 600V 35A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.102Ω
±35A
379W
lFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
lOutline
TO-247
 
      
lInner circuit
 
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
R6035KNZ1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
±35
±105
V
A
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 6.6 A
Avalanche energy, single pulse
EAS*3
796 mJ
Power dissipation (Tc = 25°C)
PD 379 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
20150914 - Rev.001    



R6035KNZ1
R6035KNZ1
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.33 /W
- - 30 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 18.1A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 0.092 0.102 Ω
- 0.200 -
- 1.0 - Ω
                                                                                         
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/12
20150914 - Rev.001





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