SST29SF512
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512...
Description
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories
FEATURES:
Preliminary Specifications
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations
– 5.0V-only for SST29SF512/010/020/040 – 2.7-3.6V for SST29VF512/010/020/040
Superior Reliability
– Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 10 mA (typical) – Standby Current:
30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
– 55 ns – 70 ns
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time:
1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040
Automatic Write Timing
– Internal VPP Generation End-of-Write Detection
– Toggle Bit – Data# Polling
TTL I/O Compatibility for SST29SFxxx
CMOS I/O Compatibility for SST29VFxxx
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin...
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