N-Channel QFET MOSFET
FQA8N90C_F109 — N-Channel QFET® MOSFET
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω Features
• 8 A, 900 V, RD...
Description
FQA8N90C_F109 — N-Channel QFET® MOSFET
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω Features
8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2) (Note 1) (No...
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