PowerTrench MOSFET. FDI8441_F085 Datasheet

FDI8441_F085 MOSFET. Datasheet pdf. Equivalent

FDI8441_F085 Datasheet
Recommendation FDI8441_F085 Datasheet
Part FDI8441_F085
Description N-Channel PowerTrench MOSFET
Feature FDI8441_F085; FDI8441_F085 N-Channel PowerTrench® MOSFET May 2010 FDI8441_F085 N-Channel PowerTrench® MOSFET 40V.
Manufacture Fairchild Semiconductor
Datasheet
Download FDI8441_F085 Datasheet




Fairchild Semiconductor FDI8441_F085
May 2010
FDI8441_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
Features
„ Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A
„ Typ Qg(10) = 215nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architectures and VRMs
„ Primary Switch for 12V Systems
©2010 Fairchild Semiconductor Corporation
FDI8441_F085 Rev.A1
1
www.fairchildsemi.com



Fairchild Semiconductor FDI8441_F085
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 160oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy
Power dissipation
Derate above 25oC
Operating and Storage Temperature
(Note 1)
Thermal Characteristics
Ratings
40
±20
80
26
See Figure 4
947
300
2
-55 to 175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(Note 2)
Thermal Resistance Junction to Ambient, 1in2 copper pad area
Package Marking and Ordering Information
0.5
62
43
oC/W
oC/W
oC/W
Device Marking
FDI8441
Device
FDI8441_F085
Package
TO-262AB
Reel Size
Tube
Tape Width
NA
Quantity
50 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250mA, VGS = 0V
VDS = 32V
VGS = 0V
TJ = 150°C
VGS = ±20V
40
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250μA
ID = 80A, VGS = 10V
ID = 80A, VGS = 10V,
TJ = 175°C
2 2.8 4
V
- 2.2 2.7
- 3.8 4.7 mΩ
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
215
29
60
32
49
-
-
-
-
280
38
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
FDI8441_F085 Rev.A1
2 www.fairchildsemi.com



Fairchild Semiconductor FDI8441_F085
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 20V, ID = 35A
VGS = 10V, RGS = 1.5Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 35A
ISD = 15A
IF = 35A, di/dt = 100A/μs
IF = 35A, di/dt = 100A/μs
Notes:
1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A.
2: Pulse width = 100s.
Min Typ Max Units
- - 77 ns
- 23 - ns
- 24 - ns
- 75 - ns
- 17.9 -
ns
- - 147 ns
-
0.8 1.25
V
-
0.8 1.0
V
- 52 68 ns
- 76 99 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDI8441_F085 Rev.A1
3 www.fairchildsemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)