N-Channel PowerTrench MOSFET
FDI8441_F085 N-Channel PowerTrench® MOSFET
May 2010
FDI8441_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
Featur...
Description
FDI8441_F085 N-Channel PowerTrench® MOSFET
May 2010
FDI8441_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
Features
Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator Distributed Power Architectures and VRMs Primary Switch for 12V Systems
©2010 Fairchild Semiconductor Corporation FDI8441_F085 Rev.A1
1
www.fairchildsemi.com
FDI8441_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage
Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed
Single Pulse Avalanche Energy
Power dissipation Derate above 25oC
Operating and Storage Temperature
(Note 1)
Thermal Characteristics
Ratings 40 ±20 80 26
See Figure 4 947 300 2
-55 to 175
Units V V
A
mJ W W/oC oC
RθJC RθJA RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(Note 2)
Thermal Resistance Junction to Ambient, 1in2 copper pad area
Package Marking and Ordering Information
0.5 62 43
oC/W oC/W oC/W
Device Marking FDI8441
Device FDI8441_F085
Package TO-262AB
Reel Size Tube
Tape Width...
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