Power MOSFET
AUTOMOTIVE GRADE
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operat...
Description
AUTOMOTIVE GRADE
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified *
D
G S
PD - 97713
AUIRFS3006
HEXFET® Power MOSFET
VDSS RDS(on)
typ. max.
ID (Silicon Limited)
ID (Package Limited)
60V
2.0m: 2.5m:
c270A
195A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S G D2Pak AUIRFS3006
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise s...
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