Power MOSFET. AUIRFS3006 Datasheet

AUIRFS3006 MOSFET. Datasheet pdf. Equivalent

Part AUIRFS3006
Description Power MOSFET
Feature AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt R.
Manufacture International Rectifier
Datasheet
Download AUIRFS3006 Datasheet

AUTOMOTIVE GRADE Features ● Advanced Process Technology ● U AUIRFS3006 Datasheet
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AUIRFS3006
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
PD - 97713
AUIRFS3006
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
2.0m:
2.5m:
c270A
195A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
G
D2Pak
AUIRFS3006
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
™270
™191
195
1080
375
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
10
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
x x10lbf in (1.1N m)
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jJunction-to-Ambient
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/22/11



AUIRFS3006
AUIRFS3006
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA
g––– 2.0 2.5 mΩ VGS = 10V, ID = 170A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
RG Internal Gate Resistance
280 ––– –––
––– 2.0 –––
S VDS = 25V, ID = 170A
Ω
IDSS Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 60V, VGS = 0V
IGSS Gate-to-Source Forward Leakage
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC ID = 170A
gVDS =30V
VGS = 10V
ID = 170A, VDS =0V, VGS = 10V
ns VDD = 39V
ID = 170A
gRG = 2.7Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 48V , See Fig. 11
hVGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 270 A MOSFET symbol
D
showing the
––– ––– 1080 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 170A, VGS = 0V
S
––– 44 ––– ns TJ = 25°C
VR = 51V,
––– 48 –––
TJ = 125°C
––– 63 ––– nC TJ = 25°C
gIF = 170A
di/dt = 100A/μs
––– 77 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 170A, di/dt 1360A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.022mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 170A, VGS =10V. Part not recommended for use
above this value .
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
2
Š RθJC value shown is at time zero
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