Power MOSFET. AUIRFS4010 Datasheet

AUIRFS4010 MOSFET. Datasheet pdf. Equivalent

Part AUIRFS4010
Description Power MOSFET
Feature AUTOMOTIVE GRADE PD - 96396A AUIRFS4010 Features AUIRFSL4010 l Advanced Process Technology l Ult.
Manufacture International Rectifier
Datasheet
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AUIRFS4010
AUTOMOTIVE GRADE
PD - 96396A
AUIRFS4010
Features
AUIRFSL4010
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.9m:
:G max. 4.7m
S ID
180A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
D
S
G
D2Pak
AUIRFS4010
D
S
D
G
TO-262
AUIRFSL4010
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
180
127
720
375
2.5
± 20
318
See Fig. 14, 15, 22a, 22b
31
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
jkRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11



AUIRFS4010
AUIRFS/SL4010
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
Min.
100
–––
–––
2.0
189
RG Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss
Coss eff. (ER)
Coss eff. (TR)
Reverse Transfer Capacitance
–––
hEffective Output Capacitance (Energy Related) –––
gEffective Output Capacitance (Time Related)
–––
Typ.
–––
0.10
3.9
–––
–––
2.0
–––
–––
–––
–––
Typ.
143
38
50
93
21
86
100
77
9575
660
270
757
1112
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
™––– V/°C Reference to 25°C, ID = 5mA
f4.7 mΩ VGS = 10V, ID = 106A
4.0 V VDS = VGS, ID = 250μA
––– S VDS = 25V, ID = 106A
––– Ω
20
250
100
-100
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Max. Units
Conditions
215 ID = 106A
f–––
–––
nC
VDS = 50V
VGS = 10V
––– ID = 106A, VDS =0V, VGS = 10V
––– VDD = 65V
f–––
–––
ns
ID = 106A
RG = 2.7Ω
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz See Fig.5
h––– VGS = 0V, VDS = 0V to 80V See Fig.11
g––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 720
––– ––– 1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 106A, VGS = 0V
––– 72 –––
––– 81 –––
––– 210 –––
––– 268 –––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 85V,
fIF = 106A
di/dt = 100A/μs
––– 5.3 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.057mH
RG = 25Ω, IAS = 106A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 106A, di/dt 1319A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
‰ RθJC value shown is at time zero.
2 www.irf.com





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