FQI27N25TU_F085

FQB27N25TM_F085/FQI27N25TU_ F085 N-Channel MOSFET FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFET 250 V, 25.5 A, 131 mΩ D May 2014 Features „ Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A „ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems GS TO-263AB D TO-262AB G S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 250 ±30 25.5 See Figure 4 972 417 3.3 -55 to + 150 0.3 43 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FQB27N25TM FQI27N25TU Device FQB27N25TM_F085 FQI27N25TU_F085 Package TO-263AB TO-262AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Notes: 1: Current is limited by bondwire configuration. 2: 3: mrR...