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NP180N04TUK Dataheets PDF



Part Number NP180N04TUK
Manufacturers Renesas
Logo Renesas
Description N-Channel MOSFET
Datasheet NP180N04TUK DatasheetNP180N04TUK Datasheet (PDF)

NP180N04TUK MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP180N04TUK-E1-AY *1 Pure Sn (Tin) Tap.

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NP180N04TUK MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) ・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP180N04TUK-E1-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) NP180N04TUK-E2-AY *1 Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263-7pin(MP-25ZT) Absolute Maximum Ratings (TA=25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±180 ±720 348 1.8 175 -55 to 175 72 518 Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) *3 0.43 Channel to Ambient Thermal Resistance Rth(ch-A) *3 83.3 Notes *1. TC = 25°C, PW ≤ 10 μ s, Duty Cycle ≤ 1% *2. RG = 25 Ω, VGS = 20 → 0 V *3. Not subject of production test. Verified by design/characterization. Unit V V A A W W °C °C A mJ °C/W °C/W R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Page 1 of 6 NP180N04TUK Electrical Characteristics (TA=25°C) Item Symbol Min Typ Max Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 IDSS IGSS VGS(th) | yfs | RDS(on) 1 ±100 2.0 3.0 4.0 75 150 0.85 1.05 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Total Gate Charge *2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note. *1 Pulse test Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 10500 1600 540 38 22 140 20 198 50 48 0.9 83 130 15750 2400 980 90 60 280 50 297 1.5 Note. *2 Not subject of production test. Verified by design/characterization. Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS =  20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 90 A VGS = 10 V, ID = 90 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 90 A VGS = 10 V RG = 0  VDD = 32 V VGS = 10 V ID = 180 A IF = 180 A, VGS = 0 V IF = 180 A, VGS = 0 V di/dt = 100 A/s R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Page 2 of 6 dT - Percentage of Rated Power - % NP180N04TUK DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 50 100 150 200 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA Pt – Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - C ID - Drain Current - A VDS - Drain to Source Voltage – V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - C/W 100  1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Page 3 of 6 ID - Drain Current - A NP180N04TUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS(th) – Gate to Source Threshold Voltage - V RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A R07DS0542EJ0200 Rev. 2.00 May 24, 2018 VGS - Gate to Source Voltage - V Page 4 of 6 RDS(on) - Drain to Source On-state Resistance - m NP180N04TUK DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF Tch - Channel Temperature - C SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V td(on),tr,td(off),tr – Switching Time - ns IF - Diode Forward Current - A ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DRAIN CURRENT trr – Reverse Recovery Time - ns VF(S-D) - Source to Drain Voltage - V R07DS0542EJ0200 Rev. 2.00 May 24, 2018 IF - Drain Current - A Page 5 of 6 NP180N04TUK.


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