Document
NP180N04TUK
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0542EJ0200 Rev. 2.00
May 24, 2018
Description
NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A )
・ Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) ・ Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP180N04TUK-E1-AY *1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP180N04TUK-E2-AY *1
Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-263-7pin(MP-25ZT)
Absolute Maximum Ratings (TA=25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 ±20
±180 ±720 348 1.8 175 -55 to 175
72 518
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C) *3
0.43
Channel to Ambient Thermal Resistance
Rth(ch-A) *3
83.3
Notes *1. TC = 25°C, PW ≤ 10 μ s, Duty Cycle ≤ 1% *2. RG = 25 Ω, VGS = 20 → 0 V
*3. Not subject of production test. Verified by design/characterization.
Unit V V A A W W °C °C A mJ
°C/W °C/W
R07DS0542EJ0200 Rev. 2.00 May 24, 2018
Page 1 of 6
NP180N04TUK
Electrical Characteristics (TA=25°C)
Item
Symbol Min Typ Max
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
IDSS IGSS VGS(th) | yfs | RDS(on)
1
±100
2.0
3.0
4.0
75
150
0.85
1.05
Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Total Gate Charge *2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge
Note. *1 Pulse test
Ciss Coss Crss td(on)
tr td(off)
tf QG QGS QGD VF(S-D) trr Qrr
10500 1600 540
38 22 140 20 198 50 48 0.9 83 130
15750 2400 980
90 60 280 50 297
1.5
Note. *2 Not subject of production test. Verified by design/characterization.
Unit A
nA V S m
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Conditions
VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 90 A VGS = 10 V, ID = 90 A
VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 90 A VGS = 10 V RG = 0
VDD = 32 V VGS = 10 V ID = 180 A IF = 180 A, VGS = 0 V IF = 180 A, VGS = 0 V di/dt = 100 A/s
R07DS0542EJ0200 Rev. 2.00 May 24, 2018
Page 2 of 6
dT - Percentage of Rated Power - %
NP180N04TUK
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
100
80
60
40
20
0
0
50
100
150
200
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
Pt – Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - C
ID - Drain Current - A
VDS - Drain to Source Voltage – V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - C/W
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0542EJ0200 Rev. 2.00 May 24, 2018
Page 3 of 6
ID - Drain Current - A
NP180N04TUK
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
Tch - Channel Temperature - C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
VGS(th) – Gate to Source Threshold Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
ID - Drain Current - A
R07DS0542EJ0200 Rev. 2.00 May 24, 2018
VGS - Gate to Source Voltage - V
Page 4 of 6
RDS(on) - Drain to Source On-state Resistance - m
NP180N04TUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
td(on),tr,td(off),tr – Switching Time - ns
IF - Diode Forward Current - A
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
trr – Reverse Recovery Time - ns
VF(S-D) - Source to Drain Voltage - V
R07DS0542EJ0200 Rev. 2.00 May 24, 2018
IF - Drain Current - A
Page 5 of 6
NP180N04TUK.