EFFECT TRANSISTOR. UT3418 Datasheet

UT3418 TRANSISTOR. Datasheet pdf. Equivalent

Part UT3418
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Feature UNISONIC TECHNOLOGIES CO., LTD UT3418 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTI.
Manufacture UTC
Datasheet
Download UT3418 Datasheet

UNISONIC TECHNOLOGIES CO., LTD UT3418 N-CHANNEL ENHANCEMENT UT3418 Datasheet
Recommendation Recommendation Datasheet UT3418 Datasheet





UT3418
UNISONIC TECHNOLOGIES CO., LTD
UT3418
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 60m@VGS = 10 V
* RDS(ON) < 70m@VGS = 4.5 V
* RDS(ON) < 155m@VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3418G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UT3418
UT3418
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current
ID 3.8 A
Pulsed Drain Current (Note 2)
IDM 15 A
Power Dissipation
PD 1.4 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θJA
MIN
TYP
MAX
UNIT
100 125 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS VDS=24V, VGS=0V
0.001 1 µA
Gate-Source Leakage Current
IGSS VGS=±12V, VDS=0V
100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1 1.4 1.8 V
VGS=10V, ID=3.8A
43 60 m
Drain-Source On-State Resistance
RDS(ON) VGS=4.5V, ID=3.5A
52 70 m
VGS=2.5V, ID=1A
101 155 m
On-State Drain Current
ID(ON) VDS=5V, VGS=4.5V
15
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
226 270 pF
Output Capacitance
COSS VDS=15V, VGS=0V, f=1.0MHz
39
pF
Reverse Transfer Capacitance
CRSS
29 pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
2.6 4 ns
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=15V,RL =3.9,
VGS =10V, RG=6
3.2 5
14.5 22
ns
ns
Turn-OFF Fall-Time
tF
2.1 3 ns
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
VDS=15V, VGS=4.5V,
ID=3.8A
3 3.6
1.4
0.55
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD IS=1A, VGS=0V
0.81 1
V
Maximum Body-Diode Continuous Current
IS
2.5 A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IF=3.8A, dI/dt=100A/μs
10.2 13
3.8 5
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-226.D





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