Inverter Module. MIXA30WB1200TED Datasheet

MIXA30WB1200TED Module. Datasheet pdf. Equivalent

Part MIXA30WB1200TED
Description Converter - Brake - Inverter Module
Feature Converter - Brake - Inverter Module XPT IGBT MIXA30WB1200TED Three Phase Rectifier Brake Three Ph.
Manufacture IXYS
Datasheet
Download MIXA30WB1200TED Datasheet

Converter - Brake - Inverter Module XPT IGBT MIXA30WB1200TE MIXA30WB1200TED Datasheet
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MIXA30WB1200TED
Converter - Brake - Inverter
Module
XPT IGBT
MIXA30WB1200TED
Three Phase
Rectifier
Brake Three Phase
Chopper
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM = 105 A IC25 = 17 A IC25 = 43 A
IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Part name (Marking on product)
MIXA30WB1200TED
21 22
D11 D13 D15
7
123
D7
16
15
D1
T1
18
17
6
D3
T3
20
19
5
D5
T5
4
D12 D14 D16 14
T7 11
10
D2
T2
12
D4
T4
13 T6 D6
23 24
NTC
8
9
E 72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
1-8



MIXA30WB1200TED
MIXA30WB1200TED
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
Ptot
VCE(sat)
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
RBSOA
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
SCSOA
tSC
ISC
RthJC
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Conditions
continuous
transient
TVJ = 25°C
TC = 25°C
TC = 80°C
min.
Ratings
typ. max.
1200
±20
±30
43
30
Unit
V
V
V
A
A
IC = 25 A; VGE = 15 V
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC = 25 A
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 39 W
TVJ = 125°C
VGE = ±15 V; RG = 39 W;
TVJ = 125°C
VCEK = 1200 V
150 W
1.8 2.1
2.1
V
V
5.4 6.0 6.5
V
0.02 1.5 mA
0.2 mA
500 nA
76 nC
70 ns
40 ns
250 ns
100 ns
2.5 mJ
3.0 mJ
75 A
VCE = 900 V; VGE = ±15 V;
RG = 39 W; non-repetitive
(per IGBT)
TVJ = 125°C
10 µs
100 A
0.84 K/W
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
Qrr
IRM
trr
Erec
RthJC
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
IF = 30 A; VGE = 0 V
VR = 600 V
diF /dt = -600 A/µs
IF = 30 A; VGE = 0 V
(per diode)
Ratings
min. typ. max.
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1200
44
30
1.95 2.2
1.95
3.5
30
350
0.9
1.2
TC = 25°C unless otherwise stated
Unit
V
A
A
V
V
µC
A
ns
mJ
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110916c
2-8





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