N-Channel MOS FET
RJK0703DPP-E0
N-Channel MOS FET 75 V, 70 A, 6.7 m
Features
High speed switching Low drive current Low on-resistan...
Description
RJK0703DPP-E0
N-Channel MOS FET 75 V, 70 A, 6.7 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Package TO-220FP
Outline
RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP)
G
1 23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID ID (pulse) Note1
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note2 EAS Note2 Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H, Tch = 25C, Rg 50,
3. Tc = 25C
Preliminary Datasheet
R07DS0630EJ0200 Rev.2.00
Oct 15, 2012
D
1. Gate 2. Drain 3. Source
S
Ratings 75 ±20 70 210 70 35 184 25 5.0 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0630EJ0200 Rev.2.00 Oct 15, 2012
Page 1 of 6
RJK0703DPP-E0
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode revers...
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