NP110N03PUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP110N03PUG TO-263 (MP-25ZP) FEATURES Channel temperature 175 degree rating Super low on-state resistance RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 16400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.8 Total Power Dissipation (TC = 25°C) PT2 288 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 62 Repetitive Avalanche Energy Note2 EAR 384 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D...