IRF7779L2PBF

l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified IRF7779L2PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 150V min ±20V max 9.0mΩ@ 10V Qg tot Qgd Vgs(th) 97nC 33nC 4.0V S S D GS S S S SD S Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 L8 DirectFET™ ISOMETRIC L4 L6 L8 Description The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance en...