NP161N04TUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note NP161N04TUG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel Note Pb-free (This product does not contain Pb in the external electrode). PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g FEATURES Super low on-state resistance RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A) High Current Rating ID(DC) = ±160 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±160 ±640 250 1.8 175 −55 to +175 70 650 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch = 150°C, VDD = 25 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.6 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or type...