NP90N04MUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP90N04MUG-S18-AY Note Pure Sn (Tin) Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode). PACKAGE TO-220 (MP-25K) typ. 1.9 g FEATURES Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A) Channel temperature 175 degree rated (TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±90 ±360 217 1.8 175 −55 to +175 60 360 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.69 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country....