IRF2804PbF

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 2.0mΩ‰ S ID = 75A TO-220AB IRF2804PbF D2Pak TO-262 IRF2804SPbF IRF2804LPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) cPulsed Drain Current Maximum Power Dissipation VGS EAS EAS (tested) IAR EAR Linear Derating Factor Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Fl...