RJL5012DPP-M0

RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C 4. Limited by maximum safe operation area Preliminary Datasheet R07DS0419EJ0100 Rev.1.00 May 26, 2011 D 1. Gate 2. Drain 3. Source S Ratings 500 ±30 12 36 12 36 3 0.5 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C R07DS0419EJ0100 Rev.1.00 May 26, 2011 Page 1 of 6 RJL5012DPP-M0 Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ...