LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS
requirements and Halogen Free
●FEATURES 1)VDS= 20V 2)RDS(ON),
[email protected],
[email protected] = 41m Ω 3)RDS(ON),
[email protected],
[email protected] = 47m Ω
LN2312LT1G
3
1 2
SOT– 23 (TO–236AB)
3D
●DEVICE MARKING AND ORDERING INFORMATION
Device LN2312LT1G LN2312LT3G
Marking N12 N12
Shipping 3000/Tape&Reel 10000/Tape&Reel
G 1 S 2
●MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage
Continuous Drain Current (Note 3),
[email protected]
TA=25℃ TA=70℃
Pulsed Drain Current (Note1,2)
Maximum Power Dissipation
Operating and Storage Temperature Range
Symbol Limits Unit
VDSS
20
V
VGS ±8 V
4.9 ID A
3.4
IDM 15 A
PD 0.75 W TJ, Tstg –55 to +150 °C
●THERMAL DATA
Parameter
Symbol
Thermal Resistance Junction-ambient(Note 3)
Rthj-a
1. Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board 3. Surface mounted on 1 in2 copper PCB board
Limits 140
Unit °C/W
July , 2015
Rev .A 1/5
LESHAN RADIO COMPANY, LTD.
LN2312LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC
Parameter Drain−to−Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current Gate−to−Source Leakage Current
Symbol V(BR)DSS VGS(TH)
IDSS IGSS
Drain−to−Source On Resistance
RDS(on)
Forward Diode Voltage Forward Transconductance
VSD gFS
Min.
20
0.4 – – – – – – –
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time
Ciss Coss Crss QG QGS QGD td(on)
tr td(off)
tf
– – – – – – – – – –
Typ. –
0.6 – –
31
24
21 –
40
Max. Unit Conditions – V VGS = 0 V, ID = 250 μA 1 V VGS = VDS, ID = 250 μA
-1 μA VDS=20V, VGS=0V
±100 nA VDS = 0 V, VGS = ±8 V
57 VGS = 1.8 V, ID =4 A 47 m Ω VGS = 2.5 V, ID =4.5 A
41 VGS = 4.5 V, ID = 5 A
1.2 V VGS = 0 V, ISD = 1.7A – S VDS = 10 V, ID = 5 A
500 300 140 11.2 1.4 2.2 15 40 48 31
– – pF VGS = 0 V, f = 1.0 MHz, – VDS= 8 V – – nC VGS =4.5 V,VDS = 10 V – ID = 5 A
25
60 70
ns
VDD = 10V, ΙD = 1Α, VGEN = 4.5V,RG = 6 Ω
45
July , 2015
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
LN2312LT1G
ELECTRICAL CHARACTERISTIC CURVES
RDSon (ohm) Normalized RDSon
ID (A) ID (A)
12 11 Ta=25 °C 10
9 8 7 6 5 4 3 2 1 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS (V)
VGS=1.8V VGS=4.5V
VGS=2.5V VGS=5.0V
VGS=3.5V
FIG.1 Typical Output Characteristics
0.07 Ta=25 °C ID=3A
0.06
0.05
0.04
12 11 Ta=150 °C 10
9 8 7 6 5 4 3 2 1 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS (V)
VGS=1.8V VGS=4.5V
VGS=2.5V VGS=5.0V
VGS=3.5V
FIG.2 Typical Output Characteristics
1.6 ID=4A
1.4 VGS=5V
1.2
1.0
0.8
0.03 012345678
VGS (V)
0.6 -50 -25 0 25 50 75 100 125 150
Tj (℃)
FIG.3 On-Resistance vs. Gate Voltage
FIG.4 Normalized On-Resistance vs. Junction Temperature
July , 2015
Rev .A 3/5
LES.