LN2312LT3G

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free ●FEATURES 1)VDS= 20V 2)RDS(ON), Vgs@4.5V, Ids@5.0A = 41m Ω 3)RDS(ON), Vgs@2.5V, Ids@4.5A = 47m Ω LN2312LT1G 3 1 2 SOT– 23 (TO–236AB) 3D ●DEVICE MARKING AND ORDERING INFORMATION Device LN2312LT1G LN2312LT3G Marking N12 N12 Shipping 3000/Tape&Reel 10000/Tape&Reel G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 3),VGS@4.5V TA=25℃ TA=70℃ Pulsed Drain Current (Note1,2) Maximum Power Dissipation Operating and Storage Temperature Range Symbol Limits Unit VDSS 20 V VGS ±8 V 4.9 ID A 3.4 IDM 15 A PD 0.75 W TJ, Tstg –55 to +150 °C ●THERMAL DATA Parameter Symbol Thermal Resistance Junction-ambient(Note 3) Rthj-a 1. Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Surface mounted on 1 in2 copper PCB board Limits 140 Unit °C/W July , 2015 Rev .A 1/5 LESHAN RADIO COMPANY, LTD. LN2312LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC Parameter Drain−to−Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Symbol V(BR)DSS VGS(TH) IDSS IGSS Drain−to−Source On Resistance RDS(on) Forward Diode Voltage Forward Transconductance VSD g...