LP4101LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking LP4101LT1G S-LP4101LT1G P41 LP4101LT3G S-LP4101LT3G P41 Shipping 3000/Tape & Reel 10,000/Tape & Reel LP4101LT1G S-LP4101LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD Operating Junction and Storage Temperature Range TJ, Tstg Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing RqJC RqJA Limit -20 ±8 -2.3 -8 0.9 0.57 -55 to 150 140 Unit V A W oC oC/W Rev .O 1/5 EL...