LBSS8402DW1T1G

LESHAN RADIO COMPANY, LTD. Power MOSFET N-Channel/P-Channel SC-88 We declare that the material of product are Halogen Free and compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBSS8402DW1T1G S-LBSS8402DW1T1G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds RθJA TL Value 50 ± 20 130 520 380 – 55 to 150 328 260 Unit Vdc Vdc mA mW °C °C/W °C 321 D2 G1 S1 S2 G2 D1 45 6 ORDERING INFORMATION Device Marking Shipping LBSS8402DW1T1G S-LBSS8402DW1T1G LBSS8402DW1T3G S-LBSS8402DW1T3G 402 402 3000 Tape & Reel 10000 Tape & Reel Rev .A 1/6 LESHAN RADIO COMPANY, LTD. LBSS8402DW1T1G , S-LBSS8402DW1T1G N-Channel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate–Source Thres...