LN9926LT1G

LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications We declare that the material of product compliance with RoHS requirements. 1 2 3 TSOP-6 6 5 4 4 Q2 5 6 Q1 3 Pin 1: Source 1 Pin 2: Drania 1 & 2 2 Pin 3: Source 2 Pin 4: Gate 2 1 Pin 5: Drania 1 & 2 Pin 6: Gate 1 Marking: Applications Battery Protection Load Switch Power Management 9 2 6C Pb Free Mark Pb-Free: " "(Note) Normal: None Pin Style: 1.Source1 2.Drain1&2 3.Source2 4.Gate2 5.Drain1&2 6.Gate1 Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current (Continuous) IDM Drain Current (Pulsed) *1 Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC Tj, Tstg RθJA Operating and Storage Temperature Range Thermal Resistance Junction to Ambient*2 *1: Maximum DC current li...