LN9926L

LESHAN RADIO COMPANY, LTD. 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications we declare that the material of product compliance with RoHS requirements. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 LN9926L G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 D2 G1 G2 S1 S2 Rating 20 ± 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 125 Unit ℃/W 1/5 LESHAN RADIO COMPANY, LTD. LN9926L Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=4.5V, ID=4A V...