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UT6K3 Dataheets PDF



Part Number UT6K3
Manufacturers Rohm
Logo Rohm
Description 30V Nch+Nch Middle Power MOSFET
Datasheet UT6K3 DatasheetUT6K3 Datasheet (PDF)

UT6K3   30V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 42mΩ ±5.5A 2W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline DFN2020-8D HUML2020L8          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Load Switch Battery Switch for mobile Type Tape width (mm) Basic ordering unit (pcs) 8 3000 DC/DC Converter Taping code TCR .

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UT6K3   30V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 42mΩ ±5.5A 2W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline DFN2020-8D HUML2020L8          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Load Switch Battery Switch for mobile Type Tape width (mm) Basic ordering unit (pcs) 8 3000 DC/DC Converter Taping code TCR Marking K03 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID ±5.5 A Pulsed drain current IDP*1 ±12 A Gate - Source voltage VGSS ±12 V Avalanche current, single pulse IAS*2 5.5 A Avalanche energy, single pulse EAS*2 2.4 mJ Power dissipation PD*3 2 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150903 - Rev.003     UT6K3            lThermal resistance Parameter Thermal resistance, junction - ambient                 Datasheet                         Symbol RthJA*3 Values Min. Typ. Max. - - 62.5 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate threshold voltage temperature coefficient Static drain - source on - state resistance Gate resistance Forward Transfer Admittance V(BR)DSS VGS = 0V, ID = 1mA  ΔV(BR)DSS ID = 1mA    ΔTj    referenced to 25℃ IDSS VDS = 30V, VGS = 0V IGSS VDS = 0V, VGS = ±12V VGS(th) VDS = VGS, ID = 1mA  ΔVGS(th)  ID = 1mA    ΔTj    referenced to 25℃ RDS(on)*4 VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 2.75A RG f=1MHz, open drain |Yfs|*4 VDS = 5.0V, ID = 5.0A Values Min. Typ. Max.     Unit 30 - - V - 18 - mV/℃ - - 1 μA - - ±100 nA 0.5 - 1.5 V - -1.8 - mV/℃ - 30 42 mΩ - 45 63 - 2.2 - Ω 2.3 - - S *1 Pw ≤ 10μs, Duty cycle ≤ 1% *2 L ⋍ 0.1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2 *3 Mounted on a Cu boad (40×40×0.8mm) *4 Pulsed                                                                                                 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150903 - Rev.003 UT6K3        lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4 VGS = 0V VDS = 15V f = 1MHz VDD ⋍ 15V,VGS = 4.5V ID = 2.75A RL = 6Ω RG = 10Ω          Datasheet Values Min. Typ. Max. - 450 - 50 - 35 - 7.2 - 5.8 - 13 - 5.1 - Unit pF ns lGate charge c.


NCN5121 UT6K3 P11NM80


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