MOSFET
RJL5013DPP-E0
500 V - 14 A - MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resista...
Description
RJL5013DPP-E0
500 V - 14 A - MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance
RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP)
1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
G
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1121EJ0100 Rev.1.00
Sep 20, 2013
D
1. Gate 2. Drain 3. Source
S
Ratings 500 ±30 14 42 14 42 3 0.5 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W
°C/W °C °C
R07DS1121EJ0100 Rev.1.00 Sep 20, 2013
Page 1 of 6
RJL5013DPP-E0
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge B...
Similar Datasheet
- RJL5013DPP-E0 MOSFET - Renesas