N-Channel SupreMOS MOSFET
FCI25N60N_F102 N-Channel MOSFET
March 2013
FCI25N60N_F102
N-Channel SupreMOS® MOSFET
600 V, 25 A, 125 mΩ
Features
• R...
Description
FCI25N60N_F102 N-Channel MOSFET
March 2013
FCI25N60N_F102
N-Channel SupreMOS® MOSFET
600 V, 25 A, 125 mΩ
Features
RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss.eff = 262 pF) 100% Avalanche Tested RoHS Compliant
Applications
Solar Inverter AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
Continuous (TC = 25oC) Continuous (TC = 100oC) Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt Power Dissipation
(TC = 25oC) Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction tempe...
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