IRFS4115PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 150V 10.3m: 12.1m: ID (Silicon Limited) c99A S ID (Package Limited) 195A D S G D2Pak IRFS4115PbF D S D G TO-262 IRFSL4115PbF G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter klJunction-to-Case jkJunction-to-Ambient www.irf.com D Drain S Source Max. 99™ 70 ™ 195 396 375 2.5 ± 20 18 -55 to + 175 300 x x10lb in (1.1N m) 830 See Fig. 14, 15, 22a, 22...