Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 96198A
IRFS4115PbF IRFSL4115PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
150V
10.3m: 12.1m:
ID (Silicon Limited)
c99A
S ID (Package Limited) 195A
D
S G D2Pak IRFS4115PbF
D
S D G TO-262 IRFSL4115PbF
G Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
klJunction-to-Case jkJunction-to-Ambient
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D Drain
S Source
Max.
99 70
195 396 375 2.5 ± 20 18 -55 to + 175
300
x x10lb in (1.1N m)
830 See Fig. 14, 15, 22a, 22...
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