High Speed Power Switching MOS FET
RJK4015DPK
400V - 30A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.14 typ. (at ID = 1...
Description
RJK4015DPK
400V - 30A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.14 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
Preliminary Datasheet
R07DS0446EJ0200 (Previous: REJ03G1590-0100)
Rev.2.00 Jun 21, 2012
1 2 3
D G
S
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25C 3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings 400 30 30 90 30 90 10 5.71 150 0.833 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W
C/W C C
R07DS0446EJ0200 Rev.2.00 Jun 21, 2012
Page 1 of 6
RJK4015DPK
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge...
Similar Datasheet