NP180N04TUJ

NP180N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP180N04TUJ -E1-AY ∗1 NP180N04TUJ -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263-7pin, Taping (E1 type) TO-263-7pin, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±180 ±720 348 1.8 175 −55 to +175 72 518 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 0.43 83.3 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt ∗3. Tch(peak) ≤ 150°C, RG = 25 Ω R07DS0180EJ0100 Rev.1.00 D...